Micron & Nanya Recommend 42-nanometer DRAM.

A DDR3 memory, 2 gigabit (Gb) DRAMs using 42-nanometer (nm) successfully developed by Micron Technology, Inc.. and Nanya Technology Corporation. This copper-based technologies will undoubtedly be useful in applications of high-performance computing, including servers, notebooks, and desktops.

The advantages of 42nm technology is also making 1.35-volt power into the power that is widely used standards compared with 1.5 volts on the previous generation memory. Please note, reduction of power consumption is very important for the server, because the cost of power and cooling infrastructure comparable to the cost of their own server equipment. with a power of 1.35 volts, then the savings can reach up to 30%.

The case when the memory on the server increased. Power consumption in memory would be increased as well. Expected to reach up to 21 watts per module and 1866 to reach the memory performance of megabits per second. Thanks to the small print and the memory density of 2GB of DDR3-42nm devices, capable of producing modules up to 16Gb capacity.

"With the movement towards the 42nm and 3Xnm process that has worked well in the facilities of our R & D in Boise, Micron expertise in copper and metalisasi special cell capacitor technology makes us remain a leader in the design of DRAM process," said Robert Feurle (DRAM Marketing Vice President ).

Micron reason to use copper, among others, is that the material cost of copper, compared with other techniques such as aluminum metalisasi. These samples are scheduled to begin in the second quarter of calendar 2010, while the implementation of planned production will begin in the second half of this year.